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Silicon Carbide (SiC) has electronic and physical properties that offers superior performance devices for high power applications. It is also used as a substrate to grow high quality Gallium Nitride (GaN) enabling fast swtiching, high power RF devices. SiC may be etched using Inductively Coupled Plasma Etching (ICP) and deposited using Plasma Enhanced Chemical Vapour Deposition (PECVD) or Inductively Coupled Plasma Chemical Vapour Deposition (ICPCVD).
Process expertise applied to demonstrate high etching rate with defect free surface. Excellent selectivity to underlying layers achieved in Via etch for RF device. Good control of profile with no trenching demonstrated in features etch for Power devices.
Process optimized for defect free etched surface with competitive etching rate.
Different chemistries can be used: pure and diluted silane
Highly uniform film with good control of stress
Doping possible using PH3, B2H6, TMB, TMP.
Different chemistries can be used: pure and diluted silane
Highly uniform film with good control of stress
Doping possible using PH3, B2H6, TMB, TMP.
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