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論文掲載日	研究論文	著者および論文のリンク	使用された装置・技術	アプリケーション
April 2026	Plasma-enhanced atomic layer deposition of Al2O3 on graphene via an in situ-deposited interlayer	Sarah Riazimehr, Ardeshir Esteki, Martin Otto, Michael Powell, Gordon Rinke, Bianca Robertz , Zhenxing Wang, Max C. Lemme , Katie Hore , Harm Knoops	Atomfab ALD	Semiconductors
January 2026	Surface Smoothing by Atomic Layer Deposition and Etching for the Fabrication of Nanodevices	Sven H. Gerritsen, Nicholas J. Chittock, Vincent Vandalon, Marcel A. Verheijen, Harm C. M. Knoops, Wilhelmus M. M. Kessels, Adriaan J. M. Mackus.	FlexAL ALD	Quantum, Semiconductors
January 2026	Investigation of the atomic layer etching mechanism for Al2O3 using hexafluoroacetylacetone and H2 plasma	Nicholas J. Chittock, Joost F. W. Maas, Ilker Tezsevin, Marc J. M. Merkx, Harm C. M. Knoops, Wilhelmus M. M. (Erwin) Kessels and Adriaan J. M. Mackus.	FlexAL ALD	Semiconductors
November 2025	Atomic layer etching of TiN by oxidation and SF6-H2 plasma exposure: ALE window defined by HF, H, and F	Guillaume Krieger, Silke A. Peeters, Bob J. M. Vonken, Nicholas J. Chittock, Adriaan J. M. Mackus, Wilhelmus M. M. (Erwin) Kessels, Harm C. M. Knoops.	FlexAL ALD	Quantum
November 2025	Effects of grain size and crystallographic orientation on plasma etching behavior in tungsten carbide	Hun Shim, Dongjun Lee, Jeongseok Kim, Seong-Hyeon Hong.	PlasmaPro 100 Cobra ICP RIE	Semiconductors
November 2025	Atomic layer etching of niobium nitride using sequential exposures of O2 and H2/SF6 plasmas	Azmain A. Hossain, Sela Murphy, David S. Catherall, Anthony J. Ardizzi, Austin J. Minnich.	FlexAL ALD	Quantum
November 2025	Cryogenic atomic layer etching of SiO2 based on cyclic CF4/Ar plasma	Madjid Adjabi, Thomas Tillocher, Philippe Lefaucheux, Eva Kovacevic, and Rémi Dussart	PlasmaPro 100 Cobra ICP RIE	Semiconductors
November 2025	Cryogenic cyclical etching of Si using CF_4 plasma passivation steps: The role of CF radicals	Jack Nos, Sylvain Iséni, Martin Kogelschatz, Gilles Cunge, Philippe Lefaucheux, Rémi Dussart, Thomas Tillocher, Émilie Despiau-Pujo	PlasmaPro 100 Cobra ICP RIE	Semiconductors
November 2025	Cryogenic etching of SiOxFy and SiO2 in SF6/H2 plasma	R. Dussart, T. Tillocher, L. Becerra, P. Lefaucheux, and L. J. Overzet.	PlasmaPro 100 Cobra ICP RIE	Semiconductors
November 2025	Scrutinizing pre- and post-device fabrication properties of atomic layer deposition WS2 thin films	Emma Coleman, Scott Monaghan, Farzan Gity, Gioele Mirabelli, Brendan Sheehan, Shashank Balasubramanyam, Ageeth A. Bol, Paul Hurley	FlexAL ALD	Semiconductors
June 2025	Superconducting NbTiN prepared at high deposition rates with plasma-enhanced atomic layer deposition and substrate biasing	Silke A. Peeters, Lisa E.W. H. M. Nelissen, Dmytro Besprozvannyy, Nidhi Choudhary, Ciaran T. Lennon, Marcel A. Verheijen, Michael Powell, Louise Bailey, Robert H. Hadfield, W. M. M. (Erwin) Kessels, Harm C. M. Knoops.	PlasmaPro ASP	Quantum
April 2025	Significant improvement of breakdown voltage of AlGaN Schottky barrier diodes by atomic layer etching	Tingang Liu, Zhiyuan Liu, Haicheng Cao, Mingtao Nong, Xiao Tang, Zixian Jiang, Glen Isaac Maciel Garcia, Kexin Ren, Xiaohang Li	PlasmaPro 100 ALE	Power devices, Discretes (GaN PE/RF)
March 2025	Line width narrowing of superconducting nanowire single photon detectors using atomic layer etching	Daniel N. Shanks, Jason P. Allmaras, Sahil R. Patel, Boris A. Korzh, Emma E. Wollman, Frank Greer, Andrew D. Beyer, Matthew D. Shaw	PlasmaPro 100 Cobra ICP RIE	Quantum
December 2024	Plasma Processes for Vertical Niobium Nitride Superconducting Through Silicon Vias	Zhong Ren, Yi Shu, Ciaran T. Lennon, Harm Knoops, Russ Renzas, Robert H. Hadfield, James Watt, Mike Cooke	PlasmaPro 100 Cobra ICP RIE, FlexAL ALD, PlasmaPro 100 Estrelas, PlasmaPro 80 RIE	Quantum
November 2024	Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H2 and SF6/Ar plasmas	Ivy I. Chen, Jennifer Solgaard, Ryoto Sekine, Azmain A. Hossain, Anthony Ardizzi, David S. Catherall, Alireza Marandi, James R. Renzas, Frank Greer, Austin J. Minnich	PlasmaPro 100 Cobra ICP RIE	Optoelectronics, Datacom, Quantum
November 2024	Digital Etching of Molybdenum Interconnects Using Plasma Oxidation	Ivan Erofeev, Antony Winata Hartanto, Muhaimin Mareum Khan, Kerong Deng, Krishna Kumar, Zainul Aabdin, Weng Weei Tjiu, Mingsheng Zhang, Antoine Pacco, Harold Philipsen, Angshuman Ray Chowdhuri, Han Vinh Huynh, Frank Holsteyns, Utkur Mirsaidov	PlasmaPro 100 Cobra ICP RIE	Semiconductors
October 2024	Demonstration of Normally-Off N-Polar GaN Deep Recess HEMT	Oguz Odabasi, Md. Irfan Khan, Kamruzzaman Khan, Elaheh Ahmadi	PlasmaPro 100 ALE	Power devices, Discretes (GaN PE/RF)
March 2024	Atomic layer etching of indium tin oxide	Christoffer Kauppinen	PlasmaPro 100 Cobra ICP RIE	Semiconductors
September 2023	Ultrathin superconducting TaC_xN_1−x films prepared by plasma-enhanced atomic layer deposition with ion-energy control	Silke A. Peeters, Ciaran T. Lennon, Marc J. M. Merkx, Robert H. Hadfield, W. M. M. (Erwin) Kessels, Marcel A. Verheijen, Harm C. M. Knoops	FlexAL ALD	Semiconductors
September 2023	Quasiatomic layer etching of silicon nitride enhanced by low temperature	Daniel N. Shanks, Rania K. Ahmed, John D. Femi-Oyetoro, Matthew R. Dickie, Andrew D. Beyer, Frank Greer	PlasmaPro 100 Cobra ICP RIE	RF Devices
August 2023	Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications	An-Chen Liu, Po-Tsung Tu, Hsin-Chu Chen, Yung-Yu Lai, Po-Chun Yeh, Hao-Chung Kuo	PlasmaPro 100 Cobra ICP RIE	Power devices, Discretes (GaN PE/RF)
August 2023	Atomic layer etching (ALE) of III-nitrides	Wan Ying Ho, Yi Chao Chow, Zachary Biegler, Kai Shek Qwah,Tanay Tak, Ashley Wissel-Garcia, Iris Liu, Feng Wu, Shuji Nakamura, James S. Speck	PlasmaPro 100 ALE	Semiconductors, Power Devices, Quantum
July 2023	Hybrid electronic–photonic sensors on a fibre tip	L. Picelli, P. J. van Veldhoven, E. Verhagen and A. Fiore	PlasmaPro 100 RIE, PlasmaPro 100 Cobra ICP RIE	Optoelectronics, Datacom
May 2023	Bias-pulsed atomic layer etching of 4H-silicon carbide producing subangstrom surface roughness	J. A. Michaels, N. Delegan, Y. Tsaturyan, J. R. Renzas, D. D. Awschalom, J. G. Eden and F. J. Heremans	PlasmaPro 100 Cobra	Semiconductors, Quantum
November 2022	Method for Keyhole-Free High-Aspect-Ratio Trench Refill by LPCVD	Henk-Willem Veltkamp, Yves L. Janssens, Meint J. de Boer, Yiyuan Zhao, Remco J. Wiegerink, Niels R. Tas and Joost C. Lötters	PlasmaPro 100 Estrelas	Micro Electro Mechanical Systems (MEMS)
September 2022	Origin of interfacial charges of Al₂O₃/Si and Al₂O₃/GaN heterogeneous heterostructures	Chuanju Wang, Feras AlQatari, Vishal Khandelwal, Rongyu Lin and Xiaohang Li	FlexAL ALD	Semiconductors
August 2022	Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry	Miika Mattinen, Farzan Gity, Emma Coleman, Joris F. A. Vonk, Marcel A. Verheijen, Ray Duffy, Wilhelmus M. M. Kessels and Ageeth A. Bol	FlexAL ALD	2D Materials
June 2022	ICP etching of GaN microstructures in a Cl₂–Ar plasma with subnanometer-scale sidewall surface roughness	Clint D. Frye, Catherine E. Reinhardt, Scott B. Donald, Lars F. Voss and Sara E. Harrison	PlasmaPro 100 ICP	Power devices, Discretes (GaN PE/RF)
May 2022	Highly suppressed interface traps of Al₂O₃/GaN through interposing a stoichiometric Ga₂O₃ layer	Chuanju Wang, Yi Lu, Che-Hao Liao, Shibin Chandroth, Saravanan Yuvaraja and Xiaohang Li	FlexAL ALD	Semiconductors
May 2022	Plasma enhanced atomic layer etching of high-k layers on WS₂	J.-F. de Marneffe, D. Marinov, A. Goodyear, P.-J. Wyndaele, N. St. J. Braithwaite, S. Kundu, I. Asselberghs, M. Cooke and S. De Gendt	PlasmaPro 100 ICP, PlasmaPro 100 ALE	2D Materials
May 2022	High synergy atomic layer etching of AlGaN/GaN with HBr and Ar	Kevin G. Crawford, James Grant, Dilini Tania Hemakumara, Xu Li, Iain Thayne and David A. J. Moran	PlasmaPro 100 ALE	Power Devices
January 2022	Surface-Oxide-Controlled InAlGaN/GaN High-Electron-Mobility Transistors Using Al₂O₃-Based Insulated-Gate Structures with H₂O Vapor Pretreatment	Shiro Ozaki, Junya Yaita, Atsushi Yamada, Yuichi Minoura, Toshihiro Ohki, Naoya Okamoto, Norikazu Nakamura and Junji Kotani	FlexAL ALD	Power Devices
October 2021	On the quantification of Auger recombination in crystalline silicon	Lachlan E. Black and Daniel H. Macdonald	FlexAL ALD	Semiconductors
September 2021	Innovative remote plasma source for atomic layer deposition for GaN devices	Harm C. M. Knoops, Karsten Arts, Jan W. Buiter, Luca Matteo Martini, Richard Engeln, Dilini Tania Hemakumara, Michael Powell, Wilhelmus M. M. (Erwin) Kessels, Chris J. Hodson and Aileen O’Mahony	Atomfab ALD	RF Devices, Power Devices
September 2021	Effect of O₂ plasma exposure time during atomic layer deposition of amorphous gallium oxide	Hanno Kröncke, Florian Maudet, Sourish Banerjee, Jürgen Albert, Sven Wiesner, Veeresh Deshpande and Catherine Dubourdieu	FlexAL ALD	Semiconductors
July 2021	Plasma-Enhanced Atomic Layer Deposition of Al₂O₃ on Graphene Using Monolayer hBN as Interfacial Layer	Bárbara Canto, Martin Otto, Michael J. Powell, Vitaliy Babenko, Aileen O'Mahony, Harm C. M. Knoops, Ravi S. Sundaram, Stephan Hofmann, Max C. Lemme and Daniel Neumaier	Atomfab ALD, FlexAL ALD	2D Materials, Optoelectronics, NEMS
April 2021	Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO₂	Karsten Arts, Harvey Thepass, Marcel A. Verheijen, Riikka L. Puurunen, Wilhelmus M. M. Kessels and Harm C. M. Knoops	FlexAL ALD	Semiconductors
February 2021	Selective etching of p-GaN over Al_0.25Ga_0.75N in Cl₂/Ar/O₂ ICP plasma for fabrication of normally-off GaN HEMTs	Andrzej Taube, Maciej Kamiński, Marek Ekielski, Renata Kruszka, Joanna Jankowska-Śliwińska, Paweł P. Michałowski, Joanna Zdunek and Anna Szerling	Plasmalab 100 ICP 180	Discretes (GaN PE/RF)
October 2020	Creation of regular arrays of faceted AlN nanostructures via a combined top-down, bottom-up approach	R. Armstrong, P.-M. Coulon, P. Bozinakis, R. W. Martin and P. A. Shields	PlasmaPro 100 Cobra ICP Etching	Optoelectronics, Quantum, Semiconductors
August 2020	Area-Selective Atomic Layer Deposition of TiN Using Aromatic Inhibitor Molecules for Metal/Dielectric Selectivity	Marc J. M. Merkx, Sander Vlaanderen, Tahsin Faraz, Marcel A. Verheijen, Wilhelmus M. M. Kessels and Adriaan J. M. Mackus	FlexAL ALD	Semiconductors
April 2020	Polarity dependence in Cl₂-based plasma etching of GaN, AlGaN and AlN	Matthew D. Smith, Xu Li, Michael J. Uren, Iain G. Thayne and Martin Kuball	PlasmaPro 80 ICP Etching	Optoelectronics, Power Devices, Quantum, RF Devices
March 2020	Low damage etching by Inductively Coupled Plasma Reactive Ion Etch (ICP-RIE) and Atomic Layer Etching (ALE) of III-V materials to enable next generation device performance	Mark Dineen, Matthew Loveday, Andy Goodyear, Mike Cooke, Andrew Newton, Stephanie Baclet, Craig Ward and Tania Hemakumara	PlasmaPro 100 Cobra ICP, PlasmaPro 100 ALE	RF Devices, Power Devices
February 2020	Development of low-loss TiO₂ waveguides	I. Hegeman, M. Dijkstra, F. B. Segerink, W. Lee and S. M. Garcia-Blanco	PlasmaPro 100 RIE	Optoelectronics
January 2020	Layer-by-Layer Thinning of PdSe₂ Flakes via Plasma Induced Oxidation and Sublimation	Anna N. Hoffman, Yiyi Gu, Justin Tokash, Jonathan Woodward, Kai Xiao and Philip D. Rack	PlasmaPro 100 Cobra ICP, PlasmaPro 100 ALE	2D Materials
December 2019	Tuning high-Q superconducting resonators by magnetic field reorientation	Christoph W. Zollitsch, James O’Sullivan, Oscar Kennedy, Gavin Dold and John J. L. Morton	PlasmaPro 100 RIE	Quantum
October 2019	High Power Si Sidewall Heaters for Fluidic Applications Fabricated by Trench-Assisted Surface Channel Technology	H. Veltkamp, Y. Zhao, M. J. de Boer, R. G. P. Sanders, R. J. Wiegerink and J. C. Lötters	PlasmaPro 100 Estrelas (Bosch-based DRIE), Ionfab IBE, PlasmaPro 80 PECVD	Micro Electro Mechanical Systems (MEMS)
September 2019	Balancing ion parameters and fluorocarbon chemical reactants for SiO₂ pattern transfer control using fluorocarbon-based atomic layer etching	Stefano Dallorto, Monica Lorenzon, Julia Szornel, Adam Schwartzberg, Andy Goodyear, Mike Cooke, Martin Hofmann, Ivo W. Rangelow and Stefano Cabrini	PlasmaPro 100 Cobra ICP, PlasmaPro 100 ALE	Semiconductors, MEMs, Optoelectronics
May 2019	Atomic layer etching of SiO₂ with Ar and CHF₃ plasmas: A self‐limiting process for aspect ratio independent etching	Stefano Dallorto, Andy Goodyear, Mike Cooke, Julia E. Szornel, Craig Ward, Christoph Kastl, Adam Schwartzberg, Ivo W. Rangelow and Stefano Cabrini	PlasmaPro 100 Cobra ICP, PlasmaPro 100 ALE	Semiconductors, MEMs, Optoelectronics
May 2019	A route towards the fabrication of 2D heterostructures using atomic layer etching combined with selective conversion	Markus H. Heyne, Daniil Marinov, Nicholas Braithwaite, Andy Goodyear, Jean-François de Marneffe, Mike Cooke, Iuliana Radu, Erik C. Neyts and Stefan De Gendt	PlasmaPro 100 Cobra ICP	2D Materials
September 2018	Ion energy measurements for Fluorocarbon-based Atomic Layer Etching	Stefano Dallorto, Andy Goodyear, Mike Cooke, Scott Dhuey, Adam Schwartzberg, Craig Ward, Ivo Rangelow and Stefano Cabrini	PlasmaPro 100 ALE	Semiconductors, MEMs, Optoelectronics
May 2018	High-Definition Nanoimprint Stamp Fabrication by Atomic Layer Etching	Sabbir A. Khan, Dmitry B. Suyatin, Jonas Sundqvist, Mariusz Graczyk, Marcel Junige, Christoffer Kauppinen, Anders Kvennefors, Maria Huffman and Ivan Maximov	Plasmalab 100 ALE	Quantum
March 2018	Tuning Material Properties of Oxides and Nitrides by Substrate. Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies	Tahsin Faraz, Harm C. M. Knoops, Marcel A. Verheijen, Cristian A. A. van Helvoirt, Saurabh Karwal, Akhil Sharma, Vivek Beladiya, Adriana Szeghalmi, Dennis M. Hausmann, Jon Henri, Mariadriana Creatore and Wilhelmus M. M. Kessels	FlexAL ALD	Semiconductors
August 2017	Atomic layer etching of gallium nitride (0001)	Christoffer Kauppinena, Sabbir Ahmed Khanc, Jonas Sundqvist, Dmitry B. Suyatin, Sami Suihkonen, Esko I. Kauppinen and Markku Sopanen	Plasmalab 100 ALE	Discretes (GaN PE/RF)
July 2017	Low damage plasma etch processes for AlGaN and GaN substrates	Matthew Loveday, Andy Goodyear, Mike Cooke, Andrew Newton, Mark Dineen, Stephanie Baclet and Paolo Abrami	PlasmaPro 100 Cobra ICP, PlasmaPro 100 ALE, PlasmaPro 100 RIE	RF Devices, Power Devices
July 2017	Low damage cyclical etching of GaN and AlGaN	A. Goodyear, P. Abrami, M. Loveday and M. Cooke	PlasmaPro 100 Cobra ICP, PlasmaPro 100 ALE	RF Devices, Power Devices
April 2017	A Raman metrology approach to quality control of 2D MoS₂ film fabrication	Elisha Mercado, Andy Goodyear, Jonathan Moffat, Mike Cooke and Ravi S. Sundaram	PlasmaPro 100 ALE, PlasmaPro 100 Cobra, PlasmaPro 100 Nano CVD	Optoelectronics, 2D Materials
March 2017	Selective patterning of amorphous silicon on MoS₂ to fabricate transition-metal dichalcogenide heterostructures	Markus Heyne, Andy Goodyear, Jean-Francois de Marneffe, Mike Cooke, Iuliana Radu, Erik C Neyts and Stefan De Gendt	PlasmaPro 100 Cobra ICP, PlasmaPro 100 ALE	2D Materials
January 2017	Atomic layer etching of amorphous silicon with selectivity towards MoS₂ for novel MX₂ heterostructure device concepts	Markus Heyne, Andy Goodyear, Jean-François de Marneffe, Mike Cooke, Erik C. Neyts, Iuliana Radu and Stefan De Gendt	PlasmaPro 100 ALE	2D Materials
December 2016	Material and optical properties of low-temperature NH₃-free PECVD SiN_x layers for photonic applications	Thalía Domínguez Bucio, Ali Z. Khokhar, Cosimo Lacava, Stevan Stankovic, Goran Z. Mashanovich, Periklis Petropoulos and Frederic Y. Gardes	PlasmaPro 100 PECVD	Photonics, Optoelectronics
December 2016	Atomic layer etching in close-to-conventional plasma etch tools	Andy Goodyear and Mike Cooke	PlasmaPro 100 Cobra ICP	Semiconductors
September 2016	Optical emission monitoring for optimisation of Atomic Layer Etch (ALE) processes	Andy Goodyear and Mike Cooke	PlasmaPro 100 ALE	Semiconductors
February 2016	Ultra-low temperature silicon nitride photonic integration platform	Zengkai Shao, Yujie Chen, Hui Chen, Yanfeng Zhang, Fangxing Zhang, Jian Jian, Zeming Fan, Lin Liu, Chunchuan Yang, Lidan Zhou and Siyuan Yu	PlasmaPro 100 ICPCVD	Photonics, Optoelectronics
January 2016	Broadband antireflection for a high-index substrate using SiN_x/SiO₂ by inductively coupled plasma chemical vapour deposition	Kim Peng Lim, Doris K. T. Ng and Qian Wang	PlasmaPro 100 ICPCVD	Compound Semiconductors, MEMs, Optoelectronics
February 2015	Design and fabrication of suspended indium phosphide waveguides for MEMS-actuated optical buffering	Ng Wing H., Podoliak Nina, Horak Peter, Wu Jiang, Liu Huiyun, Stewart William J. and Kenyon Anthony J.	PlasmaPro 100 RIE	Optoelectronics
December 2010	Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al₂O₃ Thin Films	K. B. Jinesh, J. L. van Hemmen, M. C. M. van de Sanden, F. Roozeboom, J. H. Klootwijk, W. F. A. Besling and W. M. M. Kessels	FlexAL ALD	Semiconductors, Quantum
February 2008	Fabrication of 22 nm T-gates for HEMT applications	S. Bentley, X. Li, D. A. J. Moran and I. G. Thayne	PlasmaPro 100 RIE	RF Devices
February 2007	Optimization of plasma-enhanced chemical vapor deposition silicon oxynitride layers for integrated optics applications	M. G. Hussein, K. Wörhoff, G. Sengo and A. Driessen	PlasmaPro 100 PECVD	Photonics, Optoelectronics
October 2006	Low-Hydrogen-Content Silicon Nitride Deposited at Room Temperature by Inductively Coupled Plasma Deposition	Haiping Zhou, Khaled Elgaid, Chris Wilkinson and Iain Thayne	PlasmaPro 100 ICPCVD	RF Devices

論文掲載日	研究論文	著者および論文のリンク	使用された装置・技術	アプリケーション
November 2025	Cryogenic etching of SiOxFy and SiO2 in SF6/H2 plasma	R. Dussart, T. Tillocher, L. Becerra, P. Lefaucheux, and L. J. Overzet.	PlasmaPro 100 Cobra ICP RIE	半導体
November 2025	Scrutinizing pre- and post-device fabrication properties of atomic layer deposition WS2 thin films	Emma Coleman, Scott Monaghan, Farzan Gity, Gioele Mirabelli, Brendan Sheehan, Shashank Balasubramanyam, Ageeth A. Bol, Paul Hurley	FlexAL ALD	半導体
June 2025	Superconducting NbTiN prepared at high deposition rates with plasma-enhanced atomic layer deposition and substrate biasing	Silke A. Peeters, Lisa E.W. H. M. Nelissen, Dmytro Besprozvannyy, Nidhi Choudhary, Ciaran T. Lennon, Marcel A. Verheijen, Michael Powell, Louise Bailey, Robert H. Hadfield, W. M. M. (Erwin) Kessels, Harm C. M. Knoops.	PlasmaPro ASP	量子技術
April 2025	Significant improvement of breakdown voltage of AlGaN Schottky barrier diodes by atomic layer etching	Tingang Liu, Zhiyuan Liu, Haicheng Cao, Mingtao Nong, Xiao Tang, Zixian Jiang, Glen Isaac Maciel Garcia, Kexin Ren, Xiaohang Li	PlasmaPro 100 ALE	パワーデバイス、ディスクリート (GaN PE/RF)
March 2025	Line width narrowing of superconducting nanowire single photon detectors using atomic layer etching	Daniel N. Shanks, Jason P. Allmaras, Sahil R. Patel, Boris A. Korzh, Emma E. Wollman, Frank Greer, Andrew D. Beyer, Matthew D. Shaw	PlasmaPro 100 Cobra ICP RIE	量子技術
December 2024	Plasma Processes for Vertical Niobium Nitride Superconducting Through Silicon Vias	Zhong Ren, Yi Shu, Ciaran T. Lennon, Harm Knoops, Russ Renzas, Robert H. Hadfield, James Watt, Mike Cooke	PlasmaPro 100 Cobra ICP RIE, FlexAL ALD, PlasmaPro 100 Estrelas, PlasmaPro 80 RIE	量子技術
November 2024	Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H2 and SF6/Ar plasmas	Ivy I. Chen, Jennifer Solgaard, Ryoto Sekine, Azmain A. Hossain, Anthony Ardizzi, David S. Catherall, Alireza Marandi, James R. Renzas, Frank Greer, Austin J. Minnich	PlasmaPro 100 Cobra ICP RIE	オプトエレクトロニクス、データ通信、量子技術
November 2024	Digital Etching of Molybdenum Interconnects Using Plasma Oxidation	Ivan Erofeev, Antony Winata Hartanto, Muhaimin Mareum Khan, Kerong Deng, Krishna Kumar, Zainul Aabdin, Weng Weei Tjiu, Mingsheng Zhang, Antoine Pacco, Harold Philipsen, Angshuman Ray Chowdhuri, Han Vinh Huynh, Frank Holsteyns, Utkur Mirsaidov	PlasmaPro 100 Cobra ICP RIE	半導体
October 2024	Demonstration of Normally-Off N-Polar GaN Deep Recess HEMT	Oguz Odabasi, Md. Irfan Khan, Kamruzzaman Khan, Elaheh Ahmadi	PlasmaPro 100 ALE	パワーデバイス、ディスクリート (GaN PE/RF)
March 2024	Atomic layer etching of indium tin oxide	Christoffer Kauppinen	PlasmaPro 100 Cobra ICP RIE	半導体
September 2023	Ultrathin superconducting TaC_xN_1−x films prepared by plasma-enhanced atomic layer deposition with ion-energy control	Silke A. Peeters, Ciaran T. Lennon, Marc J. M. Merkx, Robert H. Hadfield, W. M. M. (Erwin) Kessels, Marcel A. Verheijen, Harm C. M. Knoops	FlexAL ALD	半導体
September 2023	Quasiatomic layer etching of silicon nitride enhanced by low temperature	Daniel N. Shanks, Rania K. Ahmed, John D. Femi-Oyetoro, Matthew R. Dickie, Andrew D. Beyer, Frank Greer	PlasmaPro 100 Cobra ICP RIE	RFデバイス
August 2023	Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications	An-Chen Liu, Po-Tsung Tu, Hsin-Chu Chen, Yung-Yu Lai, Po-Chun Yeh, Hao-Chung Kuo	PlasmaPro 100 Cobra ICP RIE	パワーデバイス、ディスクリート (GaN PE/RF)
August 2023	Atomic layer etching (ALE) of III-nitrides	Wan Ying Ho, Yi Chao Chow, Zachary Biegler, Kai Shek Qwah,Tanay Tak, Ashley Wissel-Garcia, Iris Liu, Feng Wu, Shuji Nakamura, James S. Speck	PlasmaPro 100 ALE	半導体、パワーデバイス、量子技術
July 2023	Hybrid electronic–photonic sensors on a fibre tip	L. Picelli, P. J. van Veldhoven, E. Verhagen and A. Fiore	PlasmaPro 100 RIE, PlasmaPro 100 Cobra ICP RIE	オプトエレクトロニクス、データ通信
May 2023	Bias-pulsed atomic layer etching of 4H-silicon carbide producing subangstrom surface roughness	J. A. Michaels, N. Delegan, Y. Tsaturyan, J. R. Renzas, D. D. Awschalom, J. G. Eden and F. J. Heremans	PlasmaPro 100 Cobra	半導体、量子技術
November 2022	Method for Keyhole-Free High-Aspect-Ratio Trench Refill by LPCVD	Henk-Willem Veltkamp, Yves L. Janssens, Meint J. de Boer, Yiyuan Zhao, Remco J. Wiegerink, Niels R. Tas and Joost C. Lötters	PlasmaPro 100 Estrelas	MEMS
September 2022	Origin of interfacial charges of Al₂O₃/Si and Al₂O₃/GaN heterogeneous heterostructures	Chuanju Wang, Feras AlQatari, Vishal Khandelwal, Rongyu Lin and Xiaohang Li	FlexAL ALD	半導体
August 2022	Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry	Miika Mattinen, Farzan Gity, Emma Coleman, Joris F. A. Vonk, Marcel A. Verheijen, Ray Duffy, Wilhelmus M. M. Kessels and Ageeth A. Bol	FlexAL ALD	2次元材料
June 2022	ICP etching of GaN microstructures in a Cl₂–Ar plasma with subnanometer-scale sidewall surface roughness	Clint D. Frye, Catherine E. Reinhardt, Scott B. Donald, Lars F. Voss and Sara E. Harrison	PlasmaPro 100 ICP	パワーデバイス、ディスクリート (GaN PE/RF)
May 2022	Highly suppressed interface traps of Al₂O₃/GaN through interposing a stoichiometric Ga₂O₃ layer	Chuanju Wang, Yi Lu, Che-Hao Liao, Shibin Chandroth, Saravanan Yuvaraja and Xiaohang Li	FlexAL ALD	半導体
May 2022	Plasma enhanced atomic layer etching of high-k layers on WS₂	J.-F. de Marneffe, D. Marinov, A. Goodyear, P.-J. Wyndaele, N. St. J. Braithwaite, S. Kundu, I. Asselberghs, M. Cooke and S. De Gendt	PlasmaPro 100 ICP, PlasmaPro 100 ALE	2次元材料
May 2022	High synergy atomic layer etching of AlGaN/GaN with HBr and Ar	Kevin G. Crawford, James Grant, Dilini Tania Hemakumara, Xu Li, Iain Thayne and David A. J. Moran	PlasmaPro 100 ALE	パワーデバイス
January 2022	Surface-Oxide-Controlled InAlGaN/GaN High-Electron-Mobility Transistors Using Al₂O₃-Based Insulated-Gate Structures with H₂O Vapor Pretreatment	Shiro Ozaki, Junya Yaita, Atsushi Yamada, Yuichi Minoura, Toshihiro Ohki, Naoya Okamoto, Norikazu Nakamura and Junji Kotani	FlexAL ALD	パワーデバイス
October 2021	On the quantification of Auger recombination in crystalline silicon	Lachlan E. Black and Daniel H. Macdonald	FlexAL ALD	半導体
September 2021	Innovative remote plasma source for atomic layer deposition for GaN devices	Harm C. M. Knoops, Karsten Arts, Jan W. Buiter, Luca Matteo Martini, Richard Engeln, Dilini Tania Hemakumara, Michael Powell, Wilhelmus M. M. (Erwin) Kessels, Chris J. Hodson and Aileen O’Mahony	Atomfab ALD	RFデバイス、パワーデバイス
September 2021	Effect of O₂ plasma exposure time during atomic layer deposition of amorphous gallium oxide	Hanno Kröncke, Florian Maudet, Sourish Banerjee, Jürgen Albert, Sven Wiesner, Veeresh Deshpande and Catherine Dubourdieu	FlexAL ALD	半導体
July 2021	Plasma-Enhanced Atomic Layer Deposition of Al₂O₃ on Graphene Using Monolayer hBN as Interfacial Layer	Bárbara Canto, Martin Otto, Michael J. Powell, Vitaliy Babenko, Aileen O'Mahony, Harm C. M. Knoops, Ravi S. Sundaram, Stephan Hofmann, Max C. Lemme and Daniel Neumaier	Atomfab ALD, FlexAL ALD	2次元材料、オプトエレクトロニクス、MEMS
April 2021	Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO₂	Karsten Arts, Harvey Thepass, Marcel A. Verheijen, Riikka L. Puurunen, Wilhelmus M. M. Kessels and Harm C. M. Knoops	FlexAL ALD	半導体
February 2021	Selective etching of p-GaN over Al_0.25Ga_0.75N in Cl₂/Ar/O₂ ICP plasma for fabrication of normally-off GaN HEMTs	Andrzej Taube, Maciej Kamiński, Marek Ekielski, Renata Kruszka, Joanna Jankowska-Śliwińska, Paweł P. Michałowski, Joanna Zdunek and Anna Szerling	Plasmalab 100 ICP 180	ディスクリート (GaN PE/RF)
October 2020	Creation of regular arrays of faceted AlN nanostructures via a combined top-down, bottom-up approach	R. Armstrong, P.-M. Coulon, P. Bozinakis, R. W. Martin and P. A. Shields	PlasmaPro 100 Cobra ICP Etching	オプトエレクトロニクス、量子技術、半導体
August 2020	Area-Selective Atomic Layer Deposition of TiN Using Aromatic Inhibitor Molecules for Metal/Dielectric Selectivity	Marc J. M. Merkx, Sander Vlaanderen, Tahsin Faraz, Marcel A. Verheijen, Wilhelmus M. M. Kessels and Adriaan J. M. Mackus	FlexAL ALD	半導体
April 2020	Polarity dependence in Cl₂-based plasma etching of GaN, AlGaN and AlN	Matthew D. Smith, Xu Li, Michael J. Uren, Iain G. Thayne and Martin Kuball	PlasmaPro 80 ICP Etching	オプトエレクトロニクス、パワーデバイス、量子技術、RFデバイス
March 2020	Low damage etching by Inductively Coupled Plasma Reactive Ion Etch (ICP-RIE) and Atomic Layer Etching (ALE) of III-V materials to enable next generation device performance	Mark Dineen, Matthew Loveday, Andy Goodyear, Mike Cooke, Andrew Newton, Stephanie Baclet, Craig Ward and Tania Hemakumara	PlasmaPro 100 Cobra ICP, PlasmaPro 100 ALE	RFデバイス、パワーデバイス
February 2020	Development of low-loss TiO₂ waveguides	I. Hegeman, M. Dijkstra, F. B. Segerink, W. Lee and S. M. Garcia-Blanco	PlasmaPro 100 RIE	オプトエレクトロニクス
January 2020	Layer-by-Layer Thinning of PdSe₂ Flakes via Plasma Induced Oxidation and Sublimation	Anna N. Hoffman, Yiyi Gu, Justin Tokash, Jonathan Woodward, Kai Xiao and Philip D. Rack	PlasmaPro 100 Cobra ICP, PlasmaPro 100 ALE	2次元材料
December 2019	Tuning high-Q superconducting resonators by magnetic field reorientation	Christoph W. Zollitsch, James O’Sullivan, Oscar Kennedy, Gavin Dold and John J. L. Morton	PlasmaPro 100 RIE	量子技術
October 2019	High Power Si Sidewall Heaters for Fluidic Applications Fabricated by Trench-Assisted Surface Channel Technology	H. Veltkamp, Y. Zhao, M. J. de Boer, R. G. P. Sanders, R. J. Wiegerink and J. C. Lötters	PlasmaPro 100 Estrelas (Bosch-based DRIE), Ionfab IBE, PlasmaPro 80 PECVD	MEMS
September 2019	Balancing ion parameters and fluorocarbon chemical reactants for SiO₂ pattern transfer control using fluorocarbon-based atomic layer etching	Stefano Dallorto, Monica Lorenzon, Julia Szornel, Adam Schwartzberg, Andy Goodyear, Mike Cooke, Martin Hofmann, Ivo W. Rangelow and Stefano Cabrini	PlasmaPro 100 Cobra ICP, PlasmaPro 100 ALE	半導体、MEMS、オプトエレクトロニクス
May 2019	Atomic layer etching of SiO₂ with Ar and CHF₃ plasmas: A self‐limiting process for aspect ratio independent etching	Stefano Dallorto, Andy Goodyear, Mike Cooke, Julia E. Szornel, Craig Ward, Christoph Kastl, Adam Schwartzberg, Ivo W. Rangelow and Stefano Cabrini	PlasmaPro 100 Cobra ICP, PlasmaPro 100 ALE	半導体、MEMS、オプトエレクトロニクス
May 2019	A route towards the fabrication of 2D heterostructures using atomic layer etching combined with selective conversion	Markus H. Heyne, Daniil Marinov, Nicholas Braithwaite, Andy Goodyear, Jean-François de Marneffe, Mike Cooke, Iuliana Radu, Erik C. Neyts and Stefan De Gendt	PlasmaPro 100 Cobra ICP	2次元材料
September 2018	Ion energy measurements for Fluorocarbon-based Atomic Layer Etching	Stefano Dallorto, Andy Goodyear, Mike Cooke, Scott Dhuey, Adam Schwartzberg, Craig Ward, Ivo Rangelow and Stefano Cabrini	PlasmaPro 100 ALE	半導体、MEMS、オプトエレクトロニクス
May 2018	High-Definition Nanoimprint Stamp Fabrication by Atomic Layer Etching	Sabbir A. Khan, Dmitry B. Suyatin, Jonas Sundqvist, Mariusz Graczyk, Marcel Junige, Christoffer Kauppinen, Anders Kvennefors, Maria Huffman and Ivan Maximov	Plasmalab 100 ALE	量子技術
March 2018	Tuning Material Properties of Oxides and Nitrides by Substrate. Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies	Tahsin Faraz, Harm C. M. Knoops, Marcel A. Verheijen, Cristian A. A. van Helvoirt, Saurabh Karwal, Akhil Sharma, Vivek Beladiya, Adriana Szeghalmi, Dennis M. Hausmann, Jon Henri, Mariadriana Creatore and Wilhelmus M. M. Kessels	FlexAL ALD	半導体
August 2017	Atomic layer etching of gallium nitride (0001)	Christoffer Kauppinena, Sabbir Ahmed Khanc, Jonas Sundqvist, Dmitry B. Suyatin, Sami Suihkonen, Esko I. Kauppinen and Markku Sopanen	Plasmalab 100 ALE	ディスクリート (GaN PE/RF)
July 2017	Low damage plasma etch processes for AlGaN and GaN substrates	Matthew Loveday, Andy Goodyear, Mike Cooke, Andrew Newton, Mark Dineen, Stephanie Baclet and Paolo Abrami	PlasmaPro 100 Cobra ICP, PlasmaPro 100 ALE, PlasmaPro 100 RIE	RFデバイス、パワーデバイス
July 2017	Low damage cyclical etching of GaN and AlGaN	A. Goodyear, P. Abrami, M. Loveday and M. Cooke	PlasmaPro 100 Cobra ICP, PlasmaPro 100 ALE	RFデバイス、パワーデバイス
April 2017	A Raman metrology approach to quality control of 2D MoS₂ film fabrication	Elisha Mercado, Andy Goodyear, Jonathan Moffat, Mike Cooke and Ravi S. Sundaram	PlasmaPro 100 ALE, PlasmaPro 100 Cobra, PlasmaPro 100 Nano CVD	オプトエレクトロニクス、2次元材料
March 2017	Selective patterning of amorphous silicon on MoS₂ to fabricate transition-metal dichalcogenide heterostructures	Markus Heyne, Andy Goodyear, Jean-Francois de Marneffe, Mike Cooke, Iuliana Radu, Erik C Neyts and Stefan De Gendt	PlasmaPro 100 Cobra ICP, PlasmaPro 100 ALE	2次元材料
January 2017	Atomic layer etching of amorphous silicon with selectivity towards MoS₂ for novel MX₂ heterostructure device concepts	Markus Heyne, Andy Goodyear, Jean-François de Marneffe, Mike Cooke, Erik C. Neyts, Iuliana Radu and Stefan De Gendt	PlasmaPro 100 ALE	2次元材料
December 2016	Material and optical properties of low-temperature NH₃-free PECVD SiN_x layers for photonic applications	Thalía Domínguez Bucio, Ali Z. Khokhar, Cosimo Lacava, Stevan Stankovic, Goran Z. Mashanovich, Periklis Petropoulos and Frederic Y. Gardes	PlasmaPro 100 PECVD	フォトニクス、オプトエレクトロニクス
December 2016	Atomic layer etching in close-to-conventional plasma etch tools	Andy Goodyear and Mike Cooke	PlasmaPro 100 Cobra ICP	半導体
September 2016	Optical emission monitoring for optimisation of Atomic Layer Etch (ALE) processes	Andy Goodyear and Mike Cooke	PlasmaPro 100 ALE	半導体
February 2016	Ultra-low temperature silicon nitride photonic integration platform	Zengkai Shao, Yujie Chen, Hui Chen, Yanfeng Zhang, Fangxing Zhang, Jian Jian, Zeming Fan, Lin Liu, Chunchuan Yang, Lidan Zhou and Siyuan Yu	PlasmaPro 100 ICPCVD	フォトニクス、オプトエレクトロニクス
January 2016	Broadband antireflection for a high-index substrate using SiN_x/SiO₂ by inductively coupled plasma chemical vapour deposition	Kim Peng Lim, Doris K. T. Ng and Qian Wang	PlasmaPro 100 ICPCVD	化合物半導体、MEMS、オプトエレクトロニクス
February 2015	Design and fabrication of suspended indium phosphide waveguides for MEMS-actuated optical buffering	Ng Wing H., Podoliak Nina, Horak Peter, Wu Jiang, Liu Huiyun, Stewart William J. and Kenyon Anthony J.	PlasmaPro 100 RIE	オプトエレクトロニクス
December 2010	Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al₂O₃ Thin Films	K. B. Jinesh, J. L. van Hemmen, M. C. M. van de Sanden, F. Roozeboom, J. H. Klootwijk, W. F. A. Besling and W. M. M. Kessels	FlexAL ALD	半導体、量子技術
February 2008	Fabrication of 22 nm T-gates for HEMT applications	S. Bentley, X. Li, D. A. J. Moran and I. G. Thayne	PlasmaPro 100 RIE	RFデバイス
February 2007	Optimization of plasma-enhanced chemical vapor deposition silicon oxynitride layers for integrated optics applications	M. G. Hussein, K. Wörhoff, G. Sengo and A. Driessen	PlasmaPro 100 PECVD	フォトニクス、オプトエレクトロニクス
October 2006	Low-Hydrogen-Content Silicon Nitride Deposited at Room Temperature by Inductively Coupled Plasma Deposition	Haiping Zhou, Khaled Elgaid, Chris Wilkinson and Iain Thayne	PlasmaPro 100 ICPCVD	RFデバイス

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