PlasmaPro 100 Cobra ICP Etch

Oxford Instruments’ PlasmaPro 100 process modules offer a 200mm platform with single wafer and multi-wafer batch capability. The process modules offer excellent uniformity, high throughput and high precision processes.

Delivers reactive species to the substrate, with a uniform high conductance path through the chamber - Allows a high gas flow to be used while maintaining low pressure

Variable height electrode - Utilises the 3-dimensional characteristics of the plasma and accommodate substrates up to 10mm thick at optimum height

Wide temperature range electrode (-150°C to +400°C) which can be cooled by liquid nitrogen, a fluid re-circulating chiller or resistively heated - An optional blow out and fluid exchange unit can automate the process of switching modes

A fluid controlled electrode fed by a re-circulating chiller unit - Excellent substrate temperature control

RF powered showerhead with optimised gas delivery - Provides uniform plasma processing with LF/RF switching allowing precise control of film stress

ICP source sizes of 65mm, 180mm, 300mm - Delivers process uniformity up to 200mm wafers

High pumping capacity - Gives wide process pressure window

Wafer clamping with He backside cooling - Optimum wafer temperature control

• III-V etch processes
• Solid State Lasers InP etch
• VCSEL GaAs/AlGaAs etch
• RF device low damage GaN etch
• Silicon Bosch and cryo-etch processes
• Diamond Like Carbon (DLC) deposition
• SiO2 and quartz etch
• Failure analysis dry etch de-processing using the specially-configured PlasmaPro FA tools ranging from packaged chip and die etch through to full 200mm wafer etch
• High quality PECVD of silicon nitride and silicon dioxide for photonics, dielectric layers, passivation and many other uses
• Hard mask deposition and etch for high brightness LED production