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Gallium Nitride (GaN) is an exciting material that is enabling key advances in some important technologies. GaN High Brighntess LEDs (HBLEDs) have already revolutionised lighting, GaN laser diodes are used for high speed data transmission while GaN based RF devices will soon be applied for efficient power transfer and mobile phone base stations. GaN may be dry etched using Inductively Coupled Plasma (ICP), Reactive Ion Etching (RIE) or Ion Beam Etch (IBE). It can be deposited using ALD.
Process expertise applied to demonstrate excellent surface roughness with low damage and optimised etching rate.
Anisotropic profile achieved at competitive etching rate.
Good control of profile with excellent selectivity.
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