Power Semiconductors Brochure
Wide band gap power semiconductor device production: GaN and SiC process solutions
オックスフォード・インストゥルメンツー事業部ページ
The increasing adoption on renewable energy sources and the ever nearer prospect of electric vehicles is driving demand for power semiconductor components. Until now the device technology has mostly been based on silicon, however wide band gap materials such as GaN and SiC offer the possibility to increase efficiencies and reduce energy loss in power devices.
By combining our unique history of supplying processing equipment for high power silicon device fabrication with our extensive experience of production equipment and processes for GaN based HBLED device manufacture, we have produced world leading solution for wide band gap power device fabrication.
© オックスフォード・インストゥルメンツ 2024