Hafnium Dioxide HfO2 is a high-k dielectric used for the gate insulator in advanced integrated circuits. HfO2 may be deposited using the following process types: Atomic Layer Deposition (ALD) and Reactive Ion Beam Deposition (RIBD)
High material quality and low damage, even at low deposition temperature.
Process expertise applied to demonstrate competitive results with excellent repeatability.
© オックスフォード・インストゥルメンツ 2019