Tantalum Pentoxide (Ta2O5), also known as tantalum(V) oxide, is used in modern capacitors and as a high-k dielectric in DRAM capacitors. It can be etched using Inductively Coupled Plasma (ICP) and Reactive Ion Etching (RIE). Ta2O5 may be deposited using Atomic Layer Deposition (ALD).
Good etching rate.
High material quality and low damage, even at low deposition temperature.
Excellent stoichiometry with competitive deposition rate.
© オックスフォード・インストゥルメンツ 2019